| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1472164 | Corrosion Science | 2007 | 9 Pages |
Abstract
Thin Nb2O5 anodic films (â¼20Â nm thick) grown in phosphoric acid solution have been characterised by EIS and differential admittance study in a large range of potential and frequency. The overall electrical behaviour has been interpreted by means of the theory of amorphous semiconductor Schottky barrier in presence of a non-constant density of states (DOS). A comparison of DOS for films grown in different electrolytes is reported.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
F. Di Quarto, F. La Mantia, M. Santamaria,