Article ID Journal Published Year Pages File Type
1473178 Journal of Asian Ceramic Societies 2014 4 Pages PDF
Abstract

In this work, 750 nm-thick BaTiO3 thin films with highly (0 0 1) preferred orientation were grown on single crystal MgO substrates by RF-sputtering. Hydrogen silsesquioxane (HSQ) resist material based ridge waveguides, which were fabricated on BaTiO3 thin films, were formed by e-beam lithography. Au electrodes were deposited on top of the BaTiO3 films beside the waveguide. Propagation losses of the BaTiO3 ridge waveguide were 3–5 dB/cm in transverse electric polarization. The measured electrooptic coefficient value (r51) was 110 pm/V, which is three times larger than the electrooptic coefficient (r33 = 30.8 pm/V) of single crystal LiNbO3. SiO2 strip waveguide formed by HSQ exhibited light propagation with loss lower than 5 dB/cm. This result demonstrates potential possibility of creating highly oriented and/or epitaxially grown BaTiO3 waveguides and optical components on oxide substrates.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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