Multiscale study of ferroelectric–relaxor crossover in BaSnxTi1−xO3 ceramics

A systematic study of BaSnxTi1−xO3 solid solutions (x = 0–0.20) by a combined field-induced dielectric and ferroelectric analysis with Raman and PFM investigations was realized, in order to obtain new insights concerning the composition-induced modification of the structural phase transitions and ferroelectric–relaxor crossover induced by the increase of Sn addition. The ceramics prepared via solid state reaction and sintering at 1400 °C/4 h showed average tetragonal symmetry for x ≤ 0.15 and cubic for x = 0.20. However, the dielectric and Raman analysis demonstrated that x = 0.05 and x = 0.15 are characterized by a coexistence of phases, which enhances their macroscopic properties (polarization for x = 0.05 and permittivity for x = 0.15). The domain structure shows a gradual modification when increasing Sn addition. No detectable domain structure has been found for x ≥ 0.15. All the compositions show local d33(V) hysteresis loops at room temperature.