Pressureless sintered silicon carbide tailored with aluminium nitride sintering agent

This study reports the influence of aluminium nitride on the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Pressureless sintering was achieved at 2000 °C for 5 min with the additions of boron carbide together with carbon of 1 wt% and 6 wt%, respectively, and a content of aluminium nitride between 0 and 10 wt%. Sintered samples present relative densities higher than 92%. The sintered microstructure was found to be greatly modified by the introduction of aluminium nitride, which reflects the influence of nitrogen on the β-SiC to α-SiC transformation. The toughness of sintered sample was not modified by AlN incorporation and is relatively low (around 2.5 MPa m1/2). Materials exhibited transgranular fracture mode, indicating a strong bonding between SiC grains.