Temperature and frequency dependence of dielectric loss of Ba(Mg1/3Ta2/3)O3 microwave ceramics

Ba(Mg1/3Ta2/3)O3 ceramic possessing extremely high Q × f value of more than 300 THz at microwave frequency was developed in our previous study. It is of great interest to understand the mechanism of microwave absorption in such a practical material. In the present study we report on the temperature dependence of the dielectric loss in the Ba(Mg1/3Ta2/3)O3. The mechanism of the microwave absorption is discussed using two phonons difference process. The samples were prepared by conventional solid state reaction and sintered at 1893 K in oxygen atmosphere. Dielectric properties in the microwave range were measured by Hakki & Colemann and resonant cavity methods in the temperature range of 20–300 K. Whispering gallery mode technique was used for the measurement of the dielectric properties at the millimeter wave frequency. Dielectric loss of the Ba(Mg1/3Ta2/3)O3 at the microwave frequency increases with temperature between 200 and 300 K in general agreement with the theory of intrinsic dielectric loss derived from the two phonon difference process. However below 200 K, the dielectric loss has shown a distinctive behavior with a loss peak at 40 K. It was inferred that the loss peak of the Ba(Mg1/3Ta2/3)O3 was caused by the local orientation polarization having dispersion at the microwave frequency.