| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1474990 | Journal of the European Ceramic Society | 2010 | 6 Pages |
Abstract
An oxygen isotope-based heterostructure zinc oxide (ZnO) thin film, Zn16O/Zn18O/Zn16O, was made by pulsed laser deposition on an a-face sapphire substrate. The isotope-enriched Zn18O layer was made by irradiation of the isotope oxygen radical (18O*). The isotopic ratio in the heterostructure film was analyzed via secondary ion mass spectroscopy (SIMS). The ratio of exchange from 16O to 18O was approximately 70% when the oxygen isotope was irradiated as a radical, while it was approximately 10% when the oxygen isotope was supplied as 18O2 gas.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Kenji Matsumoto, Yutaka Adachi, Isao Sakaguchi, Naoki Ohashi, Hajime Haneda,