Deposition of alumina from dimethylaluminum isopropoxide

Results from an investigation of chemical vapor deposition of aluminum oxide from dimethylaluminum isopropoxide as a function of deposition temperature at a total pressure of 1.5 mTorr are reported. An effective activation energy for this process was determined to be 85 kJ/mol. Deposited films were shown to be oxygen-rich compared to Al2O3, with higher deposition temperatures resulting in films closer to stoichiometric alumina. Carbon content of the films increased from approximately 1 to 8 at.% at substrate temperatures of 417 and 659 °C, respectively.