Processing and properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thick films

We have investigated the processing of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN–PT) thick films on platinised alumina substrates. Nanosized PMN–PT powder with 2 mol% of excess PbO was prepared by high-energy milling and deposited on the substrate using screen-printing technology. The films were then sintered at 950 °C in a PbO-rich atmosphere. The influence of the sintering time and the amount of PbO-containing packing powder was studied and related to the structural, microstructural, dielectric and piezoelectric properties of the film. In order to obtain a homogeneous and dense thick film without any secondary phase, the PMN–PT films had to be sintered in the presence of a PbO-based liquid phase that had to be completely removed from the thick film during the final stage of the sintering. Under optimal sintering conditions we obtained a room temperature relative dielectric permittivity of 3600, dielectric losses of 0.036, a Tm of 174 °C, a permittivity at the Tm of 21,000 and a d33 of 140 pC/N.