| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1486910 | Materials Research Bulletin | 2016 | 6 Pages |
•Amorphous TiO2 resistive switching device was formed by ALD with ZnO as a blocking layer.•XPS spectra and depth profile were thoroughly investigated to verify the chemical composition of the films.•Bipolar resistive switching with a good uniformity and long retention time was confirmed without using any electrical forming process.•The conduction mechanism of the flexible device was thoroughly investigated and analyzed based on the filamentary theory.
Resistance random access memory consisting of ZnO/TiO2/Cu structure is demonstrated on a flexible and transparent PET/ITO substrate. To improve cell to cell uniformity, amorphous TiO2 fabricated by atomic layer deposition is used for resistive switching material with ZnO film as a blocking layer. XRD, SEM and AFM measurements were used to analyze the composition and structure of the ZnO/TiO2 films. XPS spectra and depth profile of the ZnO/TiO2 structure were thoroughly investigated to verify the chemical composition of the films. Resistive switching characteristics were measured and conduction mechanism was analyzed according to above analysis.
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