Article ID Journal Published Year Pages File Type
1486972 Materials Research Bulletin 2016 4 Pages PDF
Abstract

•The impact of Ge + C co-implantation on dopant diffusion was investigated.•DIBL and VTH variation was improved by Ge + C co-implantation.•The VTH mismatch and the write characteristics were improved in the DRAM device.

In this paper, germanium pre-amorphization implantation (PAI) and carbon co-implantation (Ge + C co-IIP) were applied to suppress boron diffusion. The corresponding characteristics were investigated in terms of the dopant diffusion, device performance, and its application to dynamic random access memory (DRAM). A shallow dopant profile was indicated and the threshold voltage (VTH) was reduced by approximately 45 mV by Ge + C co-IIP. In the DRAM device, the VTH mismatch of the sense amplifier NMOS pairs was reduced by approximately 15% and the write characteristics were improved two-fold.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slide

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
Authors
, , , , , , , , , , , , , ,