Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1487513 | Materials Research Bulletin | 2015 | 4 Pages |
Abstract
High (1 1 1) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlOx interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (1 1 1) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100 μm.
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Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Peng Wang, Xin Li, Hanhui Liu, Shumei Lai, Yuye Chen, Yihong Xu, Songyan Chen, Cheng Li, Wei Huang, Dingliang Tang,