| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1487709 | Materials Research Bulletin | 2015 | 4 Pages |
•NBTZr deposited on ITO/glass under O2 exhibits a phase-pure perovskite structure.•NBTZr shows a well-defined P–E with a remanent polarization of 11.5 μC/cm2.•At 100 kHz and 14 V, the dielectric tunability is 44.97% and FOM is 3.58.•At 100 kHz, the ϵr and tanδ are 205 and 0.092, respectively.
Na0.5Bi0.5(Ti0.98Zr0.02)O3 (NBTZr) thin film has been prepared by chemical solution deposition onto indium tin oxide (ITO)/glass under O2 atmosphere. The microstructure and related electrical performance are investigated. The film exhibits a phase-pure polycrystalline perovskite structure, with evenly distributed grain size and full compactness. A well-defined polarization-electric field (P–E) loop can be observed with a remanent polarization (Pr) of 11.5 μC/cm2 and small gap. At 14 V and 100 kHz, the dielectric tunability as high as 44.97% can be achieved and the dielectric constant of 205, dissipation factor of 0.092 as well as figure of merit of 3.58 are obtained.
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