| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1487750 | Materials Research Bulletin | 2015 | 5 Pages |
•Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering.•Effects of oxygen partial pressure on the properties of thin films were investigated.•For SnO2:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10−4 Ω cm.
Nitrogen-doped tin oxide (SnO2:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO2:N films were amorphous state, and O/Sn ratios of SnO2:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO2:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO2:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO2:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10−4 Ω cm.
Graphical abstractThe best SnO2:N TCO film: about 80% transmittance and 9.1 × 10−4 Ω cm.Figure optionsDownload full-size imageDownload as PowerPoint slide
