| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488177 | Materials Research Bulletin | 2014 | 4 Pages |
•Band alignment at the ZnO/TiO2 hetero-structural interface with different ZnO coating thickness was studied.•The valence band offset was decreased with increased ZnO coating layer thickness.•The interface dipole was responsible for the decreased band offset.
The band alignment at the ZnO/TiO2 hetero-structure interface was measured by high resolution X-ray photoelectron spectroscopy. The valence band offset (EZnO−ETiO2)Valence(EZnO−ETiO2)Valence was linearly changed from 0.27 to 0.01 eV at the interface with increased ZnO coating thickness from 0.7 to 7 nm. The interface dipole presented at the ZnO/TiO2 interface was responsible for the decreased band offset. The band alignment of the ZnO/TiO2 heterojunction is a type II alignment.
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