| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488317 | Materials Research Bulletin | 2014 | 5 Pages |
•We study carrier lifetimes of InGaN/GaN LEDs fabricated on different PSS.•Spatial EL distribution was investigated depending on the pattern structure.•The carrier lifetime of the LEDs was compared with the spatial EL distribution.
We investigated the emission characteristics of InGaN/GaN light-emitting diodes (LEDs) fabricated on lens-shaped (LS) patterned-sapphire substrates (PSS) by using time-resolved photoluminescence (TRPL) and confocal-scanning-electroluminescence microscopy (CSEM). The carrier lifetimes evaluated from the TRPL spectra for the LEDs on the LS-PSS (LS-LEDs) at 10 K were relatively shorter than those of the LEDs on a conventional planar substrate (C-LED). However, the carrier lifetimes for the LS-LEDs were relatively long compared to that of the C-LED at room temperature. In the CSEM images of the LS-LEDs, the emission beam around the center region of the LS pattern was relatively weaker than that of the edge region. In addition, the beam profile for the LS-LEDs showed different shapes according to the pattern structures. The emission beam around the boundary region of the LS pattern showed periodic fluctuation with the peak-to-peak distance of 814 nm.
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