| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488351 | Materials Research Bulletin | 2014 | 6 Pages |
•The coupled Cu2O with g-C3N4 of narrow-band-gap semiconductor has been designed.•g-C3N4/Cu2O is prepared via an alcohol-aqueous based on chemical precipitation method.•g-C3N4/Cu2O exhibits the enhanced photocatalytic activity under visible-light.•The enhanced photocatalytic activity is proven by the transient photocurrent test.•A mechanism for the visible-light-driven photocatalysis of g-C3N4/Cu2O is revealed.
To overcome the drawback of low photocatalytic efficiency brought by electron–hole pairs recombination and narrow photo-response range, a novel g-C3N4/Cu2O composite photocatalyst was designed and prepared successfully. Compared with bare Cu2O and g-C3N4, the g-C3N4/Cu2O composite exhibited significantly enhanced photocatalytic activity for acid orange-II (AO-II) degradation under visible light irradiation. Based on energy band positions, the mechanism of enhanced visible-light photocatalytic activity was proposed.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideThe prepared g-C3N4/Cu2O composite exhibited the enhanced photocatalytic activity under visible-light irradiation due to the stronger ability in separation of electron–hole pairs, which was proven by the transient photocurrent measurement.
