| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488431 | Materials Research Bulletin | 2014 | 6 Pages |
•Proper RTA treatment can effectively optimize band gap profile to more expected level.•Inter-diffusion of atoms account for the improvement of the graded band gap profile.•The variation of the band gap profile created an absolute gain in the efficiency by 1.22%.
In the paper, the effect of rapid thermal annealing on non-optimal double-graded band gap profiles was investigated by using X-ray photoelectron spectroscopy and capacitance–voltage measurement techniques. Experimental results revealed that proper rapid thermal annealing treatment can effectively improve band gap profile to more optimal level. The annealing treatment could not only reduce the values of front band gap and minimum band gap, but also shift the position of the minimum band gap toward front electrode and enter into space charge region. In addition, the thickness of Cu(InGa)Se2 thin film decreased by 25 nm after rapid thermal annealing treatment. All of these modifications were attributed to the inter-diffusion of atoms during thermal treatment process. Simultaneously, the variation of the band gap profile created an absolute gain in the efficiency by 1.22%, short-circuit current density by 2.16 mA/cm2 and filled factor by 3.57%.
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