| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488625 | Materials Research Bulletin | 2014 | 15 Pages |
•XRD and DTA micrographs were used to study the structure of ZnGa2Te4.•C–V, G–V and Rs–V of the diode characteristics have been analyzed for the first time.•Dielectric constant, dielectric loss, loss tangent and ac conductivity were determined.•The interfaces states were determined using conductance–voltage technique.•ZnGa2Te4 is a good candidate for electronic device applications.
Capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of p-ZnGa2Te4/n-Si HJD were studied over a wide frequency and temperature. Both the interface states density Nss and series resistance Rs were strongly frequency and temperature dependent. The interface states density Nss is decreased with increasing frequency and increase with increasing temperature. The values of the built-in potential (Vbi) were calculated and found to increase with increasing temperature and frequency. The values of capacitance C, conductance G, series resistance Rs, corrected capacitance CADJ, corrected conductance GADJ, dielectric constant (ɛ′), dielectric loss (ɛ″), loss tangent (tan δ) and the AC conductivity (σac) are strongly dependent on the applied frequency, voltage and temperature. The obtained results show that the locations of Nss and Rs have a significant effect on the electrical characteristics of the studied diode.
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