| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488691 | Materials Research Bulletin | 2013 | 4 Pages |
Oriented CuO nanowires of 15–20 μm in length were synthesized by heating copper grids under atmospheric conditions. The morphology, possible growth mechanism, electrical and catalytic properties of the nanowires were studied. The aspect ratio of the profile of the nanowires ranges from 1.3 to 2.2 indicating that the CuO nanowires are not columniform. The impurities in the copper grids play an important role in the growth of the nanowires. The transport measurement of a single CuO nanowire demonstrated that the nanowire exhibits a typical semiconductor behavior. The observed high catalytic oxidation of CO was attributed to the selectively exposed (−1 1 1) planes with more surface lattice oxygen of the nanowires.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Oriented CuO nanowires with high density of 15–20 μm in length were synthesized simply. ► The range of the aspect ratio of the nanowires indicated that they are not columniform. ► The impurities in the copper grids play an important role in the growth of the nanowires. ► Observed high catalytic oxidation of CO was attributed to the selectively exposed (−1 1 1) planes.
