| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488718 | Materials Research Bulletin | 2013 | 4 Pages |
Zn0.85Sb0.1O films were synthesized by pulsed laser deposition (PLD). The X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements were carried out to evaluate the microstructure of the films. These films exhibited a single-phase hexagonal structure with (0 0 2) preferred orientation, despite the high Sb content of ∼10% and the resulting large lattice distortion in the films. Moreover, the films showed semiconductor properties with high resistivity of ∼104 Ω cm, which was possibly related to a compensation of intrinsic defects. Compared with the undoped ZnO, a reduction in the band gap by 40 meV was clearly observed in ultraviolet–visible absorption spectra.
Graphical abstractTop SEM image (a) and SAED pattern (b) of ZnSbO film grown on Si(1 1 1) substrate at 600 °C.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We discuss the deposition of ZnSbO thin films by pulsed laser deposition (PLD). ► The films showed a high resistivity of ∼104 Ω cm, suggesting the efficient compensation of intrinsic donor-like defects. ► The ternary Zn0.9Sb0.1O film show a reduction in the band gap of ∼ 40 meV with reference to undoped ZnO films.
