Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

•Quantum confined SnO2 thin films were synthesized at 80 °C by SILAR technique.•Film formation mechanism is discussed.•Films with snow like crystallite morphology offer high specific surface area.•The blue-shifted value of band gap confirmed the quantum confinement effect.•Present synthesis has advantages – low cost, low temperature and green friendly.

Quantum confined nanostructured SnO2 thin films were synthesized at 353 K using ammonium chloride (NH4Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH4Cl solution. SnO2 films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH4Cl exhibit relatively lower resistivity of the order of 100–10−1 Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO2 films.

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