| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488940 | Materials Research Bulletin | 2013 | 5 Pages |
•Chemical solution deposition of (Bi0.95La0.05)(Fe0.97Mn0.03)O3–NiFe2O4 double layered thin film.•Studies on structural, electrical and multiferroic properties.•NiFe2O4 acts as both resistive buffer layer and magnetic source.
(Bi0.95La0.05)(Fe0.97Mn0.03)O3/NiFe2O4 double layered thin film was prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. X-ray diffraction and Raman scattering spectroscopy studies confirmed the formation of the distorted rhombohedral perovskite and the inverse spinel cubic structures for the (Bi0.95La0.05)(Fe0.97Mn0.03)O3/NiFe2O4 double layered thin film. The (Bi0.95La0.05)(Fe0.97Mn0.03)O3/NiFe2O4 double layered thin film exhibited well saturated ferromagnetic (2 Mr of 18.1 emu/cm3 and 2Hc of 0.32 kOe at 20 kOe) and ferroelectric (2Pr of 60 μC/cm2 and 2Ec of 813 kV/cm at 866 kV/cm) hysteresis loops with low order of leakage current density (4.5 × 10−6 A/cm2 at an applied electric field of 100 kV/cm), which suggest the ferroelectric and ferromagnetic multi-layers applications in real devices.
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