| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1488949 | Materials Research Bulletin | 2013 | 6 Pages |
Abstract
- Films of Ce-doped Gd3(AlxGa1âx)5O12 were grown using liquid-phase epitaxy method.
- The emission of Ce3+ is observed only when Al3+ ions are incorporated into the films.
- Gradual shift of Ce3+ levels into the bandgap occurs with the increase of x value.
- The garnet's bandgap energy rises with increasing Al3+ concentration.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
N.V. Vasil'eva, D.A. Spassky, I.V. Randoshkin, E.M. Aleksanyan, S. Vielhauer, V.O. Sokolov, V.G. Plotnichenko, V.N. Kolobanov, A.V. Khakhalin,