Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

•Dit is directly investigated from bulk-type and TFT-type CTF memory.•Charge pumping technique was employed to analyze the Dit information.•To apply the CP technique to monitor the reliability of the 3D NAND flash.

The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm−2 eV−1 to 3.66 × 1013 cm−2 eV−1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

Graphical abstractThe degradation tendency extracted by CP technique was almost the same in both the bulk-type and TFT-type cells.Figure optionsDownload full-size imageDownload as PowerPoint slide