| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1489282 | Materials Research Bulletin | 2013 | 5 Pages |
In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O3 (PLZT 2/97/3) antiferroelectric (AFE) thick films with 0–5 wt.% PbO–B2O3–SiO2–ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm3 was obtained in 3-wt.% glass-added AFE thick films.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Glass added PLZT AFE thick films were fabricated on Al2O3 substrates by screen-printing technique. ► The denser microstructure of PLZT thick films was formed by the addition of glass. ► The dielectric properties and energy-storage performance of PLZT thick films were improved by the addition of glass.
