Article ID Journal Published Year Pages File Type
1489580 Materials Research Bulletin 2011 4 Pages PDF
Abstract

The performance of GaN based devices could possibly be improved by utilizing the good p-type properties of GaP layer and it provides the possibility of the integration of InAlGaN and AlGaInP materials to produce new devices, if high quality GaP compounds can be grown on III-nitride compounds. In this paper, the growth of GaP layers on GaN by metalorganic chemical vapor deposition (MOCVD) has been investigated. The results show that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature GaP growth. Using a 40 nm thick GaP buffer layer, a single crystal GaP layer, whose full-width at half-maximum of the (1 1 1) plane measured by double crystal X-ray diffraction is 580″, can be grown on GaN. The V/III ratio plays an important role in the GaP layer growth and an appropriate V/III ratio can improve the quality of GaP layer. The GaP:Mg layer with hole carrier concentration of 4.2 × 1018 cm−3 has been obtained.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We investigated the growth of GaP layers on GaN by MOCVD. ► A single crystal GaP layer could be grown on GaN. ► The V/III ratio played an important role to improve GaP layer quality. ► The GaP:Mg layer with hole concentration of 4.2 × 1018 cm−3 was obtained.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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