Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1489684 | Materials Research Bulletin | 2012 | 4 Pages |
Abstract
Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO2/50 nm-thick HfO2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO2/HfO2 showed a higher capacitance of 35 nF/cm2 and a lower leakage current density of 4.6 nA/cm2 than 200 nm-thick SiO2. The obtained saturation mobility (μsat), threshold voltage (Vth), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm2 V−1 s−1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ji-Hong Kim, Jae-Won Kim, Ji-Hyung Roh, Kyung-Ju Lee, Kang-Min Do, Ju-Hong Shin, Sang-Mo Koo, Byung-Moo Moon,