| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1489693 | Materials Research Bulletin | 2012 | 5 Pages |
Abstract
In this work, Cu–Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu–Al alloy. The Ru/SiO2 trench, filled conformally and voidlessly by the Cu–Al (0.7 at.%) alloy, showed no presence of intermetallic compounds.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
H.K. Moon, S.J. Lee, J. Yoon, H. Kim, N.-E. Lee,