| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1489820 | Materials Research Bulletin | 2013 | 4 Pages |
Abstract
⺠A novel growth method to form InN at low growth temperatures. ⺠Use of Si reconstruction as a growth template for group III nitrides. ⺠Band gap variation of InN - Moss-Burstein shift - non-parabolic conduction band for InN. ⺠Super lattice matching epitaxy of metal induced reconstructions with III-V unit cell.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jithesh Kuyyalil, Malleswararao Tangi, S.M. Shivaprasad,