Abnormal high dielectric constant in SmFeO3 semiconductor ceramics

The dielectric properties and impedance spectroscopy (IS) of perovskite SmFeO3 ceramics were studied in the frequency range of 100 Hz–1 MHz in the temperature range from 80 K to 300 K. These materials exhibited colossal dielectric constant of ∼104 at room temperature. The response is similar to that observed for relaxor-ferroelectrics. IS data analysis indicates the ceramic to be electrically heterogeneous semiconductor consisting of semiconducting grains with dielectric constant 20 and more resistive grain boundaries. We conclude, therefore that grain boundary effect is the primary source for the high effective dielectric constant in SmFeO3 ceramics.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► SmFeO3 ceramic is exhibiting high dielectric constant value in the frequency range 100 Hz–1 MHz at room temperature. ► Dielectric constant ɛ′(T) features a step like transition at temperatures ranging from 130 K (<100 kHz) to 280 K (1 MHz). ► This step like transition was linked with thermally activated dielectric relaxation. ► The observed temperature and frequency dependent high dielectric constant in semiconducting SmFeO3 ceramics is dominated by gain boundary response.