Fast response ultraviolet Ga-doped ZnO based photoconductive detector

A metal–semiconductor–metal photoconductive detector was fabricated using high quality Ga-doped ZnO film epitaxially grown onto alumina substrate by spray pyrolysis. The photocurrent increases linearly with incident power density for more than two orders of magnitude. Reflectance and photocurrent measurements were carried out to study optoelectronic properties of Ga-doped ZnO thin film. Both spectra are consistent with each other showing good response in UV than visible region. Peak responsivity of about 1187 A/W at 5 V bias for 365 nm light was obtained in UV region.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Fabrication of photoconductive UV detector by using spray pyrolysis. ► Photoconductive UV detector based on Ga-doped ZnO on alumina with MSM structure. ► I–V characteristic, spectral and transient response of Ga-doped ZnO photodetector. ► Highest responsivity of about 1187 A/W at 5 V bias.