Structure and dielectric performance of K-doped (Pb0.5Ba0.5)ZrO3 thin films

In the present investigation (Pb0.5Ba0.5)ZrO3 (PBZ) thin films doped by K (KPBZ) from 0 to 5 mol% were successfully deposited on Pt-buffered silicon substrates by a sol–gel method. The K content dependence of microstructure and electrical properties of KPBZ thin films were studied in detail. It was found that, although all the films displayed a pure perovskite structure without obvious difference, the surface roughness of KPBZ films was decreased with increasing K content. Dielectric measurements showed that the figure of merit (FOM) values of KPBZ thin films were greatly increased by K-doping, and at the same time that the temperature-dependent stability was also improved. Thus, K doping is a promising way to optimize the overall electrical properties of PBZ thin films for potential application in tunable devices.

Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideResearch highlights▶ The surface roughness of KPBZ films was decreased with increasing K content. ▶ Dielectric constant and dielectric loss of KPBZ films were reduced by K-doping. ▶ The dielectric tunability and temperature stability of KPBZ films were optimized by K-doping.