| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1490478 | Materials Research Bulletin | 2011 | 11 Pages |
Recently ternary semiconductor nanostructured composite materials have attracted the interest of researchers because of their photovoltaic applications. Thin films of (NiS)x(CdS)(1−x) with variable composition (x = 1–0) had been deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. As grown and annealed films were characterised by X-ray diffraction, scanning electron microscopy and EDAX to investigate structural and morphological properties. The (NiS)x(CdS)(1−x) films were polycrystalline in nature having mixed phase of rhombohedral and hexagonal crystal structure due to NiS and CdS respectively. The optical and electrical properties of (NiS)x(CdS)(1−x) thin films were studied to determine compsition dependent bandgap, activation energy and photconductivity. The bandgap and activation energy of annealed (NiS)x(CdS)(1−x) film decrease with improvement in photosensitive nature.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Thin films of (NiS)x(CdS)(1−x) with variable composition (x = 1 to 0) were deposited onto glass substrates by the successive ionic layer adsorption and reaction (SILAR) method. ► The structural, surface morphological and electrical characterizations of the as deposited and annealed films were studied. ► The bandgap and activation energy of annealed (NiS)x(CdS)(1−x) film decrease with improvement in photosensitive nature.
