Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1490738 | Materials Research Bulletin | 2010 | 4 Pages |
Abstract
Ammonia nitridation of indium and gallium oxide precursors obtained through a soft solution route led to their oxynitrides [In0.97□0.03][N0.92O0.08] at 660 °C and [Ga0.89□0.11][N0.66O0.34] at 850 °C, respectively, where □ refers to a In or Ga vacancy. Cation vacancies in their wurtzite-type lattice were eliminated in similar preparations with the co-presence of Zn2+ by forming complete solid solutions of (InN)1−x(ZnO)x and (GaN)1−y(ZnO)y. The optical absorption edge shape was found to be relatively steep at the solid solution limits of x ≈ 0.23 and y ≈ 0.33 compared to the case without zinc.
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Authors
Azumi Miyaake, Yuji Masubuchi, Takashi Takeda, Shinichi Kikkawa,