| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1490940 | Materials Research Bulletin | 2009 | 5 Pages |
Abstract
The intermixing effect on InAs0.45P0.55/InP strained multiple quantum wells (SMQWs) by inductively coupled plasma (ICP) etching and rapid thermal annealing (RTA) is investigated. Experiments show that the process of ICP etching followed RTA induces the blue shift of low temperature photoluminescence (PL) peaks of QWs. With increasing etching depth, the PL intensities are firstly enhanced and then diminished. This phenomenon is attributed to the variation of surface roughness and microstructure transformation inside the QW structure during ICP processing.
Keywords
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Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Meng Cao, Hui-Zhen Wu, Yan-Feng Lao, Chun-Fang Cao, Cheng Liu,