| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1491022 | Materials Research Bulletin | 2010 | 4 Pages |
Abstract
The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V1.85W0.15O5 thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V1.85W0.15O5 thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V1.85W0.15O5 thin films annealed at 400 °C were 44, with a dielectric loss of 0.83%. The TCR values of the V1.85W0.15O5 thin films annealed at 400 °C were about −3.45%/K.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Sung-Pill Nam, Hyun-Ji Noh, Sung-Gap Lee, Young-Hie Lee,