| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1491506 | Materials Research Bulletin | 2008 | 8 Pages |
Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films with thickness of 500 nm were successfully deposited on TiO2 buffered Pt(1 1 1)/Ti/SiO2/Si(1 0 0) and Pt(1 1 1)/Ti/SiO2/Si(1 0 0) substrates via sol–gel process. Microstructure of Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was studied by X-ray diffraction analyses. The antiferroelectric nature of the Pb0.97La0.02(Zr0.95Ti0.05)O3 thin films was confirmed by the double hysteresis behaviors of polarization and double buffer fly response of dielectric constant versus applied voltage at room temperature. The capacitance–voltage behaviors of the Pb0.97La0.02(Zr0.95Ti0.05)O3 films with and without TiO2 buffer layer were studied, as a function of temperature. The temperature dependence of dielectric constant displayed a similar behavior and the Curie temperature (Tc) was 193 °C for films on both substrates. The current caused by the polarization and depolarization of polar in the Pb0.97La0.02(Zr0.95Ti0.05)O3 films was detected by current density–electric field measurement.
