| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1491890 | Materials Research Bulletin | 2008 | 7 Pages |
Abstract
The photoconductivity of pure and Cu-doped layered gallium monosulfide (GaS) single crystals, and of Ni–GaS(Cu)–In and GaS(Cu)–ZnO structures, is investigated. The activation energies of surface states were found as 0.10 eV, 0.40 eV and 17 meV, ∼400 meV for GaS and GaS(Cu), respectively. Cu acceptor levels are localized at 0.44 eV and 0.52 eV above the valence band of GaS. ZnO–GaS(Cu) heterojunctions show remarkable photosensitivity in the wavelength range of 250–700 nm.
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Authors
M. Caraman, V. Chiricenco, L. Leontie, I.I. Rusu,