Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1492001 | Materials Research Bulletin | 2006 | 5 Pages |
Abstract
Transparent conducting ZnO thin films doped with Al have been prepared by sol–gel method, which were characterized by X-ray diffraction, atomic force microscopy and ultra-violet spectrometer. The films showed a hexagonal wurtzite structure and high preferential c-axis orientation. The optical transmittance spectra of the films showed the transmittance higher than 85% within the visible wavelength region. A minimum resistivity of 6.2 × 10−4 Ω cm was obtained for the film doped with 1.5 mol.% Al, preheated at 300 °C for 15 min and post-heated at 530 °C for 1 h.
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Authors
Z.Q. Xu, H. Deng, Y. Li, Q.H. Guo, Y.R. Li,