Article ID Journal Published Year Pages File Type
1492091 Materials Research Bulletin 2008 5 Pages PDF
Abstract

A novel rare earth metal seed was employed as the catalyst for the growth of GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy were used to characterize the structure, morphology, and composition of the samples. The results demonstrate that the nanorods are high-quality single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.

Related Topics
Physical Sciences and Engineering Materials Science Ceramics and Composites
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