Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1492091 | Materials Research Bulletin | 2008 | 5 Pages |
Abstract
A novel rare earth metal seed was employed as the catalyst for the growth of GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga2O3/Tb films sputtered on Si(1 1 1) substrates. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and X-ray photoelectron spectroscopy were used to characterize the structure, morphology, and composition of the samples. The results demonstrate that the nanorods are high-quality single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jinhua Chen, Chengshan Xue, Huizhao Zhuang, Lixia Qin, Hong Li, Zhaozhu Yang, Dongdong Zhang,