| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1492313 | Materials Research Bulletin | 2006 | 5 Pages |
Abstract
We have succeeded in achieving the heteroepitaxial growth of a δ-Bi2O3 thin film on a CaF2(1 1 1) substrate by means of chemical vapour deposition under atmospheric pressure. The film grew with a strong (1 1 1) orientation. From X-ray pole figures, it was observed that the δ-Bi2O3 film grew on the CaF2(1 1 1) substrate with 60° rotational in-plane domains. The growth mode was of a 3D island type, and the grain size decreased with increasing oxygen pressure during the δ-Bi2O3 film growth, improving the overall surface smoothness.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
T. Takeyama, N. Takahashi, T. Nakamura, S. Itoh,