| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1492851 | Materials Research Bulletin | 2006 | 5 Pages |
Abstract
Low-temperature processing of ferroelectric thin films has remained a major barrier to their practical applications. In this work, RF and microwave oxygen-plasma treatment has been employed for low-temperature processing of ferroelectric thin films of sol–gel-derived Pb(Zrx,Ti1−x)O3Pb(Zrx,Ti1−x)O3 (PZT). The as-coated PZT films were annealed in oxygen ambience at 450 °°C. Subsequent RF oxygen-plasma treatment at 200 and 300 °°C resulted in fair ferroelectric hystereses. Besides, room-temperature microwave oxygen-plasma treatment gave rise to remanent polarizations as large as 15 μC/cm2.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Eung Ryul Park, Hyuk Kyoo Jang, Eung Kil Kang, Cheol Eui Lee,