| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1493416 | Optical Materials | 2016 | 4 Pages |
•Improvement in surface density of strain compensated InAs/GaNAs/GaAs quantum dots by insertion of strain mediating GaInNAs layers.•Enhancement in luminescence efficiency of strain compensated InAs/GaNAs/GaAs quantum dots by insertion of strain mediating GaInNAs layers.•Significant red shift (>1200 nm) of spectral response of InAs/GaNAs/GaAs quantum dot solar cells by insertion of strain engineering GaInNAs layers.
We report study on stacked InAs/GaNAs quantum dots heterostructures with dilute nitride GaInNAs strain mediating layers embedded in GaAs p-i-n solar cell structure. The insertion of GaInNAs strain mediating layers in the vicinity of the strain compensated InAs/GaNAs quantum dots heterostructures enhances their surface density, improves and significantly red shifts their light emission. Embedding a stack of the strain-mediated InAs/GaInNAs/GaNAs quantum dots in the i region of a GaAs p-i-n solar cell leads also to a red shift of the absorption edge of the solar cells and improves the solar cell photogenerated currents at longer wavelengths beyond 1200 nm.
