| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1493572 | Optical Materials | 2015 | 6 Pages |
•High-quality TlHgBr3 single crystals have been grown by Bridgman–Stockbarger method.•Electronic structure of TlHgBr3 is studied by XPS and XES methods.•Br 4p states contribute mainly in the upper portion of the valence band of TlHgBr3.•TlHgBr3 is a semiconductor with Eg = 2.51 eV at 100 K.•The Eg value decreases up to 2.44 eV when temperature increases to 300 K.
High-quality inclusion-free single crystals of ternary thallium mercury bromide, TlHgBr3, were successfully grown by Bridgman–Stockbarger method. For the pristine surface of the TlHgBr3 single crystal, X-ray photoelectron core-level and valence-band spectra were measured. The comparison on a common energy scale of the X-ray photoelectron valence-band spectrum of TlHgBr3 and the X-ray emission Br Kβ2 band, representing peculiarities of the energy distribution of the Br 4p states revealed that the main contribution of the valence Br p states, occurred in the upper portion of the valence band, with also their significant contributions in other valence band regions. It has been determined that TlHgBr3 is a semiconductor with the bandgap energy value of Eg = 2.51 eV at 100 K. The Eg value decreased up to 2.44 eV when temperature increased to 300 K.
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