The formation of Yb silicates and its luminescence in Yb heavily doped silicon oxides after high temperature annealing

We report on the formation of ytterbium (Yb) silicates and its photoluminescence (PL) properties for heavily Yb doped Si oxide films after various annealings. X-ray diffraction patterns and transmission electron microscopy indicate that different Yb silicates have formed in the oxides upon 1100 and 1200 °C annealing. The Yb PL intensities after the high temperature annealings are much stronger than those after lower temperatures, which indicates that the Yb silicates have higher emission efficiency than the Yb configurations found for lower temperature annealing. The PL intensities of the films can be altered considerably by secondary oxidizing or annealing in forming gas (N2 + 7% H2) ambience.