| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494148 | Optical Materials | 2014 | 4 Pages |
•We investigated the temperature dependence of Tb3+ ions in the PAA:YAP structure.•The quenching mechanism depends on the terbium concentration.•We propose the physical model to describe obtained results.
Terbium doped YAlO3 composites were fabricated by the co-precipitation method in a porous anodic alumina (PAA) films grown on silicon at three different Tb concentrations: 0.23, 0.87 and 2.11 at.%. To investigate the emission thermal quenching for all samples, we measured the emission spectra as a function of temperature in the range from 10 up to 500 K at 266 and 488 nm excitation wavelengths. Based on obtained results we proposed the physical model explaining the mechanism of Tb3+ emission quenching in YAlO3 composites deposited into PAA film.
