| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494237 | Optical Materials | 2015 | 6 Pages |
•Photovoltaic devices with structure ITO/MoO3/CuPc/PTCDI-C8/Al were fabricated.•Improvement in device performance was observed with the introduction of MoO3 layer.•Optimum thickness of MoO3 anode buffer layer was found to be 6 nm.•Improved efficiency is due to decrease in contact resistance of ITO/CuPc interface.•Stability improvement is attributed to prevention of humidity infiltration by MoO3.
The effect of MoO3 anode buffer layer on power conversion efficiency and stability of small molecular photovoltaic devices based on CuPc/PTCDI-C8 heterojunction was investigated. Substantial improvement in device efficiency and stability was achieved with the incorporation of a thin MoO3 anode buffer layer. The improvement in efficiency is attributed to the decrease in contact resistance due to the reduction of barrier height at the CuPc/ITO interface. For the optimized MoO3 thickness the device exhibited a fill factor of 50.32% and efficiency of 1.6%. Stability enhancement is due to the prevention of oxygen and humidity infiltration by MoO3 anode buffer layer.
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