| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494328 | Optical Materials | 2014 | 5 Pages |
•Ga:GIG crystal has a comparable magneto-optical performance with Ga:YIG crystal.•Annealing can improve optical transmittance and affect saturation magnetization.•Ga:GIG bulk single crystals with good quality were successfully grown by EFG method.•Success of growing GIG by EFG provides a new way to grow incongruent melting crystal.•Tc and Ms of Ga:GIG crystal decrease with increasing of Ga3+-doped concentration.
Ga-doped Gd3Fe5O12 (GIG) single-crystals with various doping concentration were successfully grown by the edge-defined film fed growth (EFG) technique. XRD pattern and SEM micrographs confirm that the as-grown crystal is in the single GIG phase with good crystal quality. The success of growing Ga:GIG crystal by using EFG method provide a new way to grow the single crystal of the incongruent melting compound. The magnetic parameters such as the Curie temperature Tc, the saturation magnetization Ms, the magnetic coercivity Hc, the magnetic saturation field Hs, the Faraday rotation angle of as-grown crystals were measured. After as-grown crystal was annealed at 800 °C in oxygen atmosphere, the optical transmittance can be significantly enhanced. The reason for the change of the saturation magnetization Ms before and after annealing is also discussed.
Graphical abstractGa:GIG crystal successfully grown by EFG method has a good magneto-optical performance.Figure optionsDownload full-size imageDownload high-quality image (70 K)Download as PowerPoint slide
