| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494355 | Optical Materials | 2014 | 4 Pages |
•We grew 2-in. size GAGG single crystals with various Ga concentration by Cz method.•We investigated Ga segregation and lowest limit of Ga for single crystal growth.•Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration.•Relation between composition, structure, scintillation properties was discussed.
2-in. size Ce 1%:Gd3(Al1−xGax)5O12 (GAGG) single crystals with various Ga concentration of x = 2, 2.4, 2.7 and 3 were grown by the Czochralski (Cz) method. Light yield has maximum value of 58,000 photon/MeV at x = 2.7 Ga concentration. Energy resolution was improved with decreasing Ga concentration and x = 2.4 sample showed best energy resolution of 4.2%@662 keV. The dependence of scintillation properties on crystal structure and Al–Ga was discussed.
