| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1494768 | Optical Materials | 2012 | 4 Pages |
The 3-aminopropyltrimethoxysilane (APTMS) self-assembled monolayer (SAM) has been used as a buffer layer between a dielectric (native SiO2) and the pentacene (Pn) thin film. Based on in situ low-energy electron microscope (LEEM) and ex-situ noncontact atomic force microscope (nc-AFM) measurements, it is shown that passivation of SiO2 with APTMS significantly improves the morphology of pentacene films. The observed lower nucleation density of Pn islands on the APTMS-treated surface results in improved crystallinity of the Pn layer. Moreover, the de-wetting of Pn monolayer is prevented by the interfacial APTMS SAM. This has significant potential for the improvement of the FET carrier mobility in Pn-based electronic devices.
► Applied 3-aminopropyltrimethoxysilane as a buffer between SiO2 and pentacene film. ► Lower nucleation density of Pn on APTMS-treated substrate results in a better film. ► APTMS buffer layer prevents de-wetting of Pn film in vacuum.
